Designed for WLAN applications in the 2.4 GHz to 2.5 GHz range and optimized for 802.11b and g, the RMPA2453-251 power amplifier comes in a 16-pin package measuring 3 mm x 3 mm x 1 mm with internal matching on both input and output to 50ohms. The amplifier is fabricated using the company's InGaP heterojunction bipolar transistor (HBT) technology. It operates from a single positive supply and includes two shutdown options, bias and logic control, and an integrated power detector with a 20 dB dynamic range. Typical performance for small signal gain is 26 dB and output power is 26.5 dBm at 1 dB compression. Other features include an EVM of 4% when meeting 802.11g at 54 Mb/s with an output power of 19 dBm and a modulated output power of greater than 23 dBm when meeting 802.11b spectral mask requirements. For price, call RAYTHEON CO., Andover, MA. (978) 684-8900.
Company: RAYTHEON CO.
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