EE Product News

RF LDMOS Devices Fit 3G Wireless Duties

A family of RF LDMOS devices for various frequency levels is said to provide unmatched performance for W-CDMA/UMTS base stations. Each device in the family is optimized for various bands. They’re fully characterized and individually tuned to operate at frequencies from 2.0 to 2.4 GHz and are suited for all linear transmitter formats. The MRF21000 series uses the firm’s fourth-generation RF LDMOS process to support devices for the emerging third-generation (3G) wireless market. They retain many features of the firm’s earlier generations of RF LDMOS devices and add ESD protection, minimization of hot-carrier injection effects, improved linearity, and optimized input and output matching. First offerings include the MRF21060, a single-ended 60W device operating at 2.17 GHz for Class AB W-CDMA applications. It’s available in flanged and flangeless packages.


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