The company’s MicroFET thin package reportedly helps designers avoid compromising their designs by providing a low-profile package, the FDFMA2P859T, that integrates a P-channel PowerTrench MOSFET and Schottky diode. The package promises to meet the critical efficiency and thermal needs common to battery-charging and power-multiplexing applications. According to the company, the device provides excellent power dissipation and conduction-loss characteristics and a 30% height reduction over the industry-standard 0.8-mm MicroFET package. Price is $0.39 each/1,000. FAIRCHILD SEMICONDUCTOR, San Jose, CA. (800) 341-0392.