EE Product News

Power MOSFET Immune To Single-Event Gate Rupture

Extending the company's rad-hard power MOSFET family, the FSJ163, FSYC163, FSYC264 and FSJ360 FETs are claimed to be immune to single-event effects (SEE), particularly single-event gate rupture. The devices are intended for harsh environments exposed to radiation in applications such as switching regulation, switching converters, motor drives, relay drivers, and drivers for high-power bipolar switching transistors that require high speed and low gate-drive power. Voltage ratings include 130V, 250V and 400V, and the devices are available in both TO-254 and SMD2 packages.


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TAGS: Components
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