The insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device typically used as an electronic switch in a wide range of applications. It combines...
As an alternative to traditional silicon MOSFETs, silicon carbide MOSFETs offer the advantages of higher blocking voltage, lower on-state resistance, and higher thermal conductivity...
Gallium nitride transistors have emerged as a high-performance alternative to silicon-based transistors, thanks to the technology's ability to be made allow smaller device...
