The M59BW102 flash memory IC operates on a single 3-V supply and can access sequential data in 20 ns, with a cycle time of 25 ns. Random-data access time is 55ns. The chip can be erased electrically at the chip level and programmed word-by-word in-system. Fabricated with 0.3-µm technology, the device is specified for 100,000 program-erase cycles and 20-year data retention. Pricing is $3 each/10,000.
Company: STMICROELECTRONICS INC.
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