With N- and P-channel devices screened to MIL-PRF-19500, the R9 FETs offer superior performance and efficiency with a familiar silicon gate drive setup, allowing for easy design reuse and immediate efficiency gains. R9 is a low-risk upgrade enhancing space-grade power systems' reliability and reducing costs for high-throughput satellites and other designs.

RIC7S113EVAL1 is an open loop half bridge eval board featuring a rad hard 400 V high-speed power MOSFET/IGBT driver, and a 650 V, 8 A rad hard PowerMOSFET. Ideal for quick benchtop evaluation, it supports multiple power topologies and various MOSFET tests. It offers flexible power stage configurations, independent or single bias power supply, and optimized PCB layout for ease of engineering.

Engineers face challenges like limited board space, power dissipation, and radiation effects when designing power architecture for space systems. Infineon’s new superjunction technology helps engineers overcome these hurdles and reach peak performance and reliability, enabling high-efficiency power systems in space applications.

Unlock the power of rad hard technology with IG1NT052N10R, the industry’s first GaN transistor with JANS qualification. Designed for extreme environment applications, the device brings top reliability and efficiency to space applications, reducing energy losses and increasing overall system performance in mission-critical operations.

Infineon’s rad tolerant N-channel FETs, available in 60 V and 150 V voltages and two plastic package options, are optimized for LEO missions and constellations. With a TID of 30 krad(Si), automotive qualification, and SEE specification, the FETs are aptly suited for all power related applications and bring unmatched reliability to the NewSpace market.

Infineon IR HiRel designs and manufactures top-tier MIL-PRF qualified power solutions for A&D applications. HiRel’s advanced Si, SiC, and GaN power portfolio offers unmatched performance and reliability with over 40 years as a trusted partner to the DoD, NASA, and DARPA to prove it. With a COTS+ engagement model, HiRel offers a range of services to meet customers’ go-to-market strategies.

Infineon’s rad hard GaN transitor is packaged in the new PowIR-SMD, delivering industry-leading efficiency and power density in a small and lightweight package. Learn several key PCB design rules to aid switching and power dissipation functions in the new GaN transistor.

Infineon’s rad hard GaN transistor has achieved a major milestone as one of the first DLA-qualified GaN devices to enter the high reliability market with MIL-PRF-19500 JANS certification and COTS options available. From an ultra-low RDS(ON) to a lightweight package, learn what makes this new GaN device a standout in space applications.

Infineon’s broad range of high-performance and high reliability silicon bipolar transistors are ideal for low noise and high-gain broadband amplifiers and are supplied in hermetically sealed microwave transistor packages as well as chips. Learn what makes our 6 GHz transistor an optimal solution for A&D applications.

GNSS encompasses more than global positioning. Satellites use star trackers and GNSS receivers for precise location, emphasizing the importance of signal amplification and power consumption. Infineon offers rad hard microwave transistors in hermetically sealed ceramic packages for such applications. The portfolio includes microwave pin- & Schottky-diodes, MW-transistors, and powerMOS transistors.