Providing high output power for C-band VSAT and telecommunications transmitters, NEZ5964-35E GaAs MESFETs offer high power, gain and linearity for the output stages of amplifier designs, as well as better performance vs. power consumption. Typical power output is 45.5 dBm, linear gain is 10 dB, and power added efficiency is 40%. Input and output circuits are internally matched to 50 ohms for superior gain flatness; a tungsten silicide gate structure provides high reliability; silicon dioxide and nitride passivation provides surface stability; and a plated heatsink provides reduced thermal resistance.
Company: CALIFORNIA EASTERN LABORATORIES
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