EE Product News

P-Channel MOSFET Offers Low RDS(ON)

Ultra-low on-resistance makes the MMSF4205 P-channel power MOSFET suitable for digital GSM cell phone designs. The device is fabricated on the firmís high cell-density HDTMOS planar process for low gate capacities for faster switching time for any given capacitance load. It's designed for use in low-voltage, high-speed switching where power efficiency is critical. Typical applications include PA and battery disconnect switches, dc-dc converters and power management in portable and battery powered systems.


Product URL: Click here for more information

Hide comments


  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.