EE Product News

Power FETs Set On-Resistance Records

Designed to handle battery protection assignments in one- and two-cell lithium-ion and lithium-polymer battery packs and circuitry, five N-channel power MOSFETs have been developed to enhance the company's Micro Foot device line. Claiming to set new records for low on-resistance, the 20V Si8900EDB features an on-resistance of 24 m_ at a 4.5V gate drive in a package measuring 8.07 mm2. Measuring 3.68 mm2, the 20V Si8902EDB offers on-resistance of 45 m_ at a 4.5V gate drive. Both FETs stand 0.62 mm high and provide ESD protection up to 4 kV. The 30V, bi-directional Si6876EDQ provides a 30 m_ on-resistance at a 4.5V gate drive in a TSSOP-8 package. With a lower breakdown voltage, the 20V Si6880EDQ has an 18 m_ on-resistance and operates down to 1.8V. For applications requiring extended thermal performance, the 30V Si7902EDN dual common-drain MOSFET comes in a 1212-8 package measuring 10.56 mm2 and 1.07 mm high. Its on-resistance is 28 m_ at a 4.5V gate drive and 3 kV of ESD protection. All five power FETs operate over a temperature range of -55°C to 150°C. Prices range from $0.60 to $1.15 each/100K. VISHAY INTERTECHNOLOGY INC., Shelton, CT. (402) 563-6866.


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