Vishay has developed the SiA436DJ, a 8 V n-channel TrenchFET power MOSFET boasting the industry's lowest on-resistance for an n-channel device in the thermally enhanced PowerPAK SC-70 package. The power MOSFET offers an on-resistance of 9.4 mΩ at 4.5 V, 10.5 mΩ at 2.5 V, 12.5 mΩ at 1.8 V, 18 mΩ at 1.5 V, and 36 mΩ at 1.2 V. These values are purported to be up to 64% lower than the closest competing n-channel device in the 2 mm by 2 mm footprint area. The device will be useful for load switching in portable electronics such as smartphones and tablet PCs, as well as mobile computing applications. The PowerPAK SC-70 package saves PCB space in these applications while its low on-resistance translates into lower conduction losses. Samples and production quantities of the SiA436DJ TrenchFET power MOSFET are available now, with lead times of 12 weeks for large orders. Pricing for U.S. delivery starts at $0.25 each/100,000.