Low-Latency NAND Flash as Storage Class Memory (SCM): Filling the Gap Between DRAM and Storage

This FAQ explores how low-latency NAND flash memory enhances high-performance computing by filling the gap between DRAM and storage, optimizing AI data center architectures, and improving performance and power efficiency.
March 18, 2026

Confused about what types of memory to use where in high-performance computing environments? Don’t be. Our FAQ “Low-Latency NAND Flash as Storage Class Memory (SCM): Filling the Gap Between DRAM and Storage” explains what you need to know about the memory hierarchy and the role low-latency NAND flash memory can play in optimizing performance. In it, you’ll discover:

• How to understand and optimize AI data center memory architectures.

• How SCM performance compares to DRAM performance and TLC/QLC flash memory performance.

• What are the power-consumption considerations for the various types of memory.

• What is the role of high-IOPS solid-state storage for AI workloads.

• What are the key use cases for low-latency NAND flash memory.

• Is Compute Express Link (CXL) a good memory expansion option for AI workloads using SCM.

• What does the future hold for SCM.

Download our FAQ on low-latency NAND flash SCM today to learn how to optimize memory for AI workloads.