Webinar: Optimizing SiC Power Systems with Real Measurements

Watch this webinar to learn why, as power electronics shift from Si to SiC, higher switching speeds and efficiency gains make it critical to measure and understand real-world device behavior to inform design decisions.
April 16, 2026

As power electronics transition from Silicon (Si) to Silicon Carbide (SiC), higher switching speeds and efficiency gains make it critical to understand how devices behave under real operating conditions, and how those results inform design decisions.

In this webinar:

  • Learn how to characterize the dynamic performance of SiC MOSFETs using standardized methods like Double Pulse Testing (DPT) following JEDEC definitions.
  • Learn how to interpret waveforms, and extract performance-relevant parameters including Eon, Eoff, Qrr, and overshoots. 
  • Explore key test setups for discrete and power module evaluation platforms, and current sensing approaches. 
  • Practical guidance on probe selection, tip adapters, and test point design will help you set up repeatable, high-quality measurements. 
  • How to optimize device behavior by adjusting gate resistance and minimizing cross-talk.