The 2,200-V PowiGaN technology brings higher power density, greater efficiency, and safer and simpler system architectures to EVs, AI data centers, and photovoltaic and HVDC systems.
Paralleling GaN transistors increases the power handling capability of a high-efficiency and high-power density converter. To be successful, parallel operation depends on the designer’s ability to deal with parasitic elements within the GaN devices as well as those associated with interfacing circuits.
This article presents a comparative study of the parametric recovery and shift of three mainstream GaN HEMTs experiencing repetitive overvoltage switching close to their dynamic breakdown voltage.
