POWER electronics

June 1, 2009
PRESS PACK POWER SEMICONDUCTOR MODULE Issued May 26, 2009U.S. Patent 7,538,436Gunturi, et al. The high-power pack semiconductor module comprises a layer


Issued May 26, 2009
U.S. Patent 7,538,436
Gunturi, et al.

The high-power pack semiconductor module comprises a layer which is brought into direct contact with one or both of the main electrodes of the Si semiconductor chip, said layer being made of a metal matrix composite material whose coefficient of thermal expansion can be tailored to a value either close or matching that of Si.

Inventors: Gunturi; Satish (Baden-Dattwil, CH), Schneider; Daniel (Zurich, CH)

Assignee: ABB Research Ltd (Zurich, CH)

Appl. No.: 10/527,993

Filed: September 29, 2003

PCT Filed: September 29, 2003


Issued May 26, 2009
United States Patent 7,538,425
Myers, et al.

A power semiconductor device package utilizes integral fluid conducting micro-channels, one or more inlet ports for supplying liquid coolant to the micro-channels, and one or more outlet ports for exhausting coolant that has passed through the micro-channels. The semiconductor device is mounted on a single- or multi-layer circuit board having electrical and fluid interconnect features that mate with the electrical terminals and inlet and outlet ports of the device to define a self-contained and self-sealed micro-channel heat exchanger.

Inventors: Myers; Bruce A. (Kokomo, IN), Peugh; Darrel E. (Kokomo, IN), Wilkinson; Lester (Kokomo, IN), Gerbsch; Erich W. (Cicero, IN)

Assignee: Delphi Technologies, Inc. (Troy, MI)

Appl. No.: 10/900,538

Filed: July 28, 2004


Issued May 19, 2009
United States Patent 7,535,684
Ganev, et al.

Overspeed protection of sensorless electric drives is needed in the aerospace industry. Methods for overspeed protection may include software implementations, hardware implementations or combinations thereof. Typical high-speed rotating machinery is designed to sustain overspeed operation of up to 50% beyond maximum normal operation. This requirement leads to substantial penalties in weight and volume. The methods of the present invention may allow for an opportunity to reduce this overspeed design to about 5 to 15%, typically about 7%.

Inventors: Ganev; Evgeni (Torrance, CA), Johnson; Edward L. (Torrance, CA), Nguyen; Cuong V. (Redondo Beach, CA)

Assignee: Honeywell International Inc. (Morristown, NJ)

Appl. No.: 11/621,478

Filed: January 9, 2007


Issued May 19, 2009
United States Patent 7,535,303
Weggel, et al.

A method and apparatus for providing electrical power through two terminals to a load, wherein a portion of an LC-filter circuit is connectable to each of the terminals. A feedback circuit having a sense capacitor is operably couplable to both portions of the LC output filter. The feedback circuit provides a feedback signal when a frequency of ac voltage across the sense capacitor substantially reaches the resonant frequency of the LC output filter so as to actively damp the voltage across the load.

Inventors: Weggel; Craig R. (Willow Grove, PA), Yost; Donald A. (Lansdale, PA), Detweiler; James P. (Lansdale, PA)

Assignee: Performance Controls, Inc. (Montgomeryville, PA)

Appl. No.: 11/497,194

Filed: August 1, 2006


Issued May 19, 2009
United States Patent 7,535,120
Erdman, et al.

A wind-powered turbine with low-voltage ride-through capability. An inverter is connected to the output of a turbine generator. The generator output is conditioned by the inverter resulting in an output voltage and current at a frequency and phase angle appropriate for transmission to a three-phase utility grid. A frequency and phase-angle sensor is connected to the utility grid operative during a fault on the grid. A control system is connected to the sensor and to the inverter. The control system output is a current-command signal enabling the inverter to put out a current waveform, which is the same phase and frequency as detected by the sensor.

Inventors: Erdman; William (Orinda, CA), Cousineau; Kevin L. (Lompoc, CA), Mikhail; Amir S. (Santa Barbara, CA)

Assignee: Chipper Windpower Technology, Inc. (Carpenteria, CA)

Appl. No.: 11/729,399

Filed: March 27, 2007


Issued May 19, 2009
United States Patent 7,534,683
Shenoy, et al.

A trench MOS-gated transistor is formed as follows. A first region of a first-conductivity type is provided. A well region of a second-conductivity type is then formed in an upper portion of the first region. A trench is formed which extends through the well region and terminates within the first region. Dopants of the second-conductivity type are implanted along predefined portions of the bottom of the trench to form regions which are contiguous with the well region so that when the transistor is in an on-state, the deeper portion of the well prevents a current-flow through those channel-region portions directly above the deeper well region.

Inventors: Shenoy; Praveen Muraleedharan (Wilkes Barre, PA), Kocon; Christopher Boguslaw (Mountaintop, PA)

Assignee: Fairchild Semiconductor Corporation (South Portland, ME)

Appl. No.: 11/829,262

Filed: July 27, 2007


Issued May 19, 2009
United States Patent 7,534,151

Electrical connection terminal has a housing formed of an insulating material, at least one conductor connection element in the terminal housing, and at least one contact element which is electrically connected to the conductor connection element. The connection terminal housing has at least one conductor insertion opening for inserting a conductor to be connected and at least one actuation opening for actuating the at least one conductor connection element. The conductor insertion openings are surrounded by a peripheral wall which projects beyond a housing surface in which the conductor insertion openings are formed, and the actuation openings are surrounded by a peripheral wall.

Inventors: Billerbeck; Martina (Schieder-Schwalenberg, DE)

Assignee: Phoenix Contact GmbH & Co. KG (Blomberg, DE)

Appl. No.: 12/039,163

Filed: February 28, 2008

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