GaN HEMTs Get Boost To Save Power

In correlation with its maturation, Wi-Fi technology (or any technology for that matter) requires a consistent grade of power-saving technology to counter the appetites of expanding functionality and energy waste. Recently, Fujitsu unveiled its latest achievements in improving gallium-nitride (GaN) high electron-mobility transistors (HEMT) to tout greater power-saving qualities.


Fujitsu plans to direct its updated technology towards Wi-Fi infrastructures such as satellite communications (VSATs) and WiMAX and cellular basestations. By improving the crystal quality and streamlining the layer structure to moderate the electric field in a GaN HEMT structure with few surface traps by using its proprietary n-type GaN cap layer, Fujitsu reportedly birthed transistors that can withstand temperatures of 200 degrees Celsius and boasts one-million-hour longevity under pinch-off conditions with a drain voltage of 50 V.


Currently, HEMTs are used in a wide range of infrastructure technologies such as satellite broadcasting receivers, mobile phones, GPS, and broadband. It functions on the principle that electrons located in the junction of two different bandgap materials move at higher speeds compared to electrons located in ordinary doped semiconductors.

Fujitsu
www.fujitsu.com