EE Product News

Low-Voltage Power MOSFETs Provide Protection Features

The OMNIFET II family of power MOSFETs uses the firm's latest VIPower M0-3 technology to achieve lower conduction losses through reduced on-resistance, small structural volume and a high level of ruggedness and avalanche energy-handling capabilities. The devices include user-transparent clamping and protection circuits including linear current limiting, overvoltage clamping, short circuit protection, gate ESD protection and fast-acting thermal protection. A typical familymember is the VNN3NV04, an N-channel device with 120-milliohm on-resistance, 3A internal current limit and 40V clamping voltage.


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