EE Product News

Planar MOSFETs Touts Unique Topology

The company's advanced planar MOSFET stripe structure topology is used in six new MOSFETs that are claimed to offer the industry's best figure of merit. The new devices also promise lower on-resistances, lower gate charges, and a higher energy density in avalanche and commutation modes. Designed for use in switch-mode power supplies and dc/dc converters and housed in TO-220 packages, the 500V FQP18N50V2 FETs have a figure of merit of greater than 20%, while the 200V FQD18N20V2 in D-PAKs provide a figure of merit of greater than 39%. The three 200V and three 500V devices in the series have maximum current ratings from 15A to 20A, on-resistances of 140 m? (200V) and 265 m?. For further information and prices, call FAIRCHILD SEMICONDUCTOR INTERNATIONAL, San Jose, CA. (888) 522-5372.


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