Electronic Design
Power MOSFETs Trim On Resistance And Improve Gate Charge

Power MOSFETs Trim On Resistance And Improve Gate Charge

The SiHP16N50C (TO-220AB), SiHF16N50C (TO-220 FULLPAK), SiHB16N50C (D2PAK), and SiHG16N50C (TO-247AC) 500V, 16A n-channel power MOSFETs specify a 0.38Ω maximum on-resistance at a 10V gate drive. In addition to their low on-resistance, the devices feature a gate charge of 68 nC. Gate charge times on-resistance, a key figure of merit for MOSFETs used in power conversion applications, is 25.84 Ω-nC. Additionally, the devices employ Vishay Planar Cell technology, which has been tailored to minimize on-state resistance and withstand high-energy pulses in the avalanche and commutation modes. Pricing for US delivery only starts at $0.814 for the SiHP16N50C, $0.907 for the SiHF16N50C, $0.905 SiHB16N50C, and $1.108 for the SiHG16N50C.  VISHAY INTERTECHNOLOGY, INC., Malvern, PA. (619) 336-0860.

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