Electronic Design
  • Resources
  • Directory
  • Webinars
  • CAD Models
  • Video
  • Blogs
  • More Publications
  • Advertise
    • Search
  • Top Stories
  • Tech Topics
  • Analog
  • Power
  • Embedded
  • Test
  • AI / ML
  • Automotive
  • Data Sheets
  • Topics
    - TechXchange Topics --- Markets --AutomotiveAutomation-- Technologies --AnalogPowerTest & MeasurementEmbedded
    Resources
    Electronic Design ResourcesTop Stories of the WeekNew ProductsKit Close-UpElectronic Design LibrarySearch Data SheetsCompany DirectoryBlogsContribute
    Members
    ContentBenefitsSubscribeDigital editions
    Advertise
    https://www.facebook.com/ElectronicDesign
    https://www.linkedin.com/groups/4210549/
    https://twitter.com/ElectronicDesgn
    https://www.youtube.com/channel/UCXKEiQ9dob20rIqTA7ONfJg
    1. Markets
    2. Energy

    GaN HEMTs Get Boost To Save Power

    July 9, 2007
    In correlation with its maturation, Wi-Fi technology (or any technology for that matter) requires a consistent grade of power-saving technology to counter the appetites of expanding functionality and energy waste. Recently, Fujitsu unveiled its latest ach
    Staff


    In correlation with its maturation, Wi-Fi technology (or any technology for that matter) requires a consistent grade of power-saving technology to counter the appetites of expanding functionality and energy waste. Recently, Fujitsu unveiled its latest achievements in improving gallium-nitride (GaN) high electron-mobility transistors (HEMT) to tout greater power-saving qualities.


    Fujitsu plans to direct its updated technology towards Wi-Fi infrastructures such as satellite communications (VSATs) and WiMAX and cellular basestations. By improving the crystal quality and streamlining the layer structure to moderate the electric field in a GaN HEMT structure with few surface traps by using its proprietary n-type GaN cap layer, Fujitsu reportedly birthed transistors that can withstand temperatures of 200 degrees Celsius and boasts one-million-hour longevity under pinch-off conditions with a drain voltage of 50 V.


    Currently, HEMTs are used in a wide range of infrastructure technologies such as satellite broadcasting receivers, mobile phones, GPS, and broadband. It functions on the principle that electrons located in the junction of two different bandgap materials move at higher speeds compared to electrons located in ordinary doped semiconductors.

    Fujitsu
    www.fujitsu.com

    Continue Reading

    Sponsored Recommendations

    CoolSiC™ Products

    Nov. 17, 2023

    Modular systems with high performance and high application efficiency

    Nov. 17, 2023

    The Infineon Podcast4Engineers

    Nov. 17, 2023

    Depth Sensors Visualize Volumes

    Nov. 1, 2023

    Comments

    To join the conversation, and become an exclusive member of Electronic Design, create an account today!

    I already have an account

    New

    Eliminate Resistive Cabin Heating in Electric Vehicles

    “Incredible Animal Journeys”: How Did NatGeo Track and Film Those Migrations?

    Renesas Reveals Automotive Processor Roadmap

    Most Read

    Edge AI Opportunities Abound at embedded world

    April 1st, 2023 @ Electronic Design

    Robotic Delivery System Takes Flight


    Sponsored

    VIPERGAN50 Advanced Quasi-Resonant Offline High-Voltage Converter

    Unlocking the power of high voltage

    Nomenclature, Types, & Structure of GaN Transistors

    Electronic Design
    https://www.facebook.com/ElectronicDesign
    https://www.linkedin.com/groups/4210549/
    https://twitter.com/ElectronicDesgn
    https://www.youtube.com/channel/UCXKEiQ9dob20rIqTA7ONfJg
    • About Us
    • Contact Us
    • Advertise
    • Do Not Sell or Share
    • Privacy & Cookie Policy
    • Terms of Service
    © 2023 Endeavor Business Media, LLC. All rights reserved.
    Endeavor Business Media Logo