Designers of portable electronics such as cell phones, portable
media players, and GPS devices are always pushing
to squeeze every ounce of battery life out of the application.
In particular, in the realm of power conversion, engineers
aspire to ensure that every coulomb that leaves the battery finds
its way to a point-of-load (POL) without being lost or dissipated
as heat.
The solution is not always straightforward, though, because
as in most analog disciplines, multi-dimensional tradeoffs must
be considered. Specifically, efficiency and footprint often seem
to pull in opposite directions. However, a split-supply lowdropout
regulator (LDO), such as the FAN2560, may let you
have your cake and eat it, too.
Switchers have become popular for extending battery life in
applications where the POL is at a voltage substantially lower
than the battery supply. A typical “energy conscious” application
may use two switchers to supply power to 1.8-V and 1.5-V
loads (Fig. 1).
The efficiency in such a system is quite high. Assuming a battery
supply (VBAT) of 3.6 V and 150 mA delivered to each load,
the total power-conversion efficiency of two 3-MHz switchers
with multilayer chip inductors is typically 90%. However, the
tradeoff is that the application requires two inductors covering
about 10 mm2.
Another solution is to use one switcher and one LDO (Fig.
2). The obvious benefit is the need for only one inductor,
which consumes about 5 mm2. However, the tradeoff is a lower
efficiency due to linear regulation of the second channel.
With VBAT = 3.6 V and 150 mA delivered to each load, total
power-conversion efficiency is typically 60% (90% for the
switcher and 42% for the LDO). Not only does this hurt functions
like talk time, but the system designer also now faces
thermal-dissipation issues across the LDO.
A third approach is to use an LDO with a split-supply architecture
(Fig. 3). In this case, the switcher is post-regulated by an
FAN2560 split-supply LDO. This device uses one supply as the
input to the drain of the pass FET and the other supply to drive
the gate.
In this circuit, most of the voltage drop is converted at the
higher efficiency provided by the switcher, while the remaining
300 mV is converted linearly from the output of the switching
regulator (V1). VBAT is used only to bias the gate and, as a
result, consumes only on the order of tens of microamps.
This configuration needs only one 5-mm2 inductor and
achieves an overall efficiency of 83%, assuming 150 mA for each load and VBAT = 3.6 V. In
addition, by having access to the VBAT line, the architecture
can use an NMOS as the pass device, which
typically allows for better dynamic performance in
areas such as transient response.
To summarize the three scenarios:
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1: Efficiency = 90%, inductor footprint = 10 mm2
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2: Efficiency = 60%, inductor footprint = 5 mm2
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3: Efficiency = 83%, inductor footprint = 5 mm2
The above scenarios may have been somewhat
“hand waved.” However, the margin of difference
between the scenarios in terms of efficiency and
footprint is large enough to allow such liberties.