7/8/2003
Edited by PETech Staff
RF MOSFETs
IXYS RF’s new line of low capacitance linear RF MOSFETs is ideal for applications up to 250 MHz, including1.5T and 3T MRI, HF and VHF base stations and broadcast applications. The new linear Z-MOS TM portfolio features a BVDSS voltage rating of 500V. Furthermore, the combination of high-performance, low-cost packaging combined with high-voltage Z-MOS TM results in the industry's lowest cost per watt in terms of RF output power.
The Z-MOS TM portfolio is packaged in the low inductance, low profile, electrically isolated, surface-mount DE275 and DE275X2 packages. The matched thermal coefficient of expansion between the aluminum nitride substrate and the Z-MOS TM die results in improved reliability and power cycling performance.
For more information, visit www.ixysrf.com.