Substrate Material Passes Temperature Cycling Tests

May 4, 2005
KYOCERA announced its copper bonded silicon nitride ceramic substrate achieved 5000 cycles of air-to-air temperature cycling at -60°C to 175°C without any failure. Its base ceramic substrate is Kyocera silicon nitride (Si3N4) with 850 MPa of flexural ...

KYOCERA announced its copper bonded silicon nitride ceramic substrate achieved 5000 cycles of air-to-air temperature cycling at -60°C to 175°C without any failure. Its base ceramic substrate is Kyocera silicon nitride (Si3N4) with 850 MPa of flexural strength and 5.0 MPam1/2 of fracture toughness. This silicon nitride is much stronger than other ceramics, such as alumina (Al2O3) with its 274 MPa of flexural strength and 3.3 MPam1/2 of fracture toughness. Another comparison may be made with aluminum nitride (AlN), which offers 400 MPa and 2.7 MPam1/2.

Copper is bonded on the silicon nitride substrate by an active metal bonding (AMB) method using silver-copper-titanium brazing metallization. Active metal bonding is a stronger method of adhering copper to ceramics when compared to conventional copper bonding methods without metallization, typically using a copper-oxide process. The AMB copper bonded silicon nitride substrate is much stronger mechanically than conventional copper bonded alumina and aluminum nitride substrates. Kyocera AMB silicon nitride technology is suitable as a substrate material for use in power microelectronics applications in automotive, aerospace and other harsh environments.

For more information, visit americas.kyocera.com.

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