International Rectifier, IR introduced a new generation Insulated Gate Bipolar Transistor (IGBT) technology platform. The Generation 8 (Gen8) 1200V IGBT platform utilizes IR's latest generation trench gate field stop technology to offer best-in-class performance for industrial and energy saving applications.
The novel Gen8 design allows best-in-class Vce(on) to reduce power dissipation and increase power density, and delivers superior robustness.
The new technology offers softer turn-off characteristics ideal for motor drive applications, minimizing dv/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. A narrow distribution of parameters offers excellent current sharing when paralleling multiple IGBTs in high-current power modules. The thin wafer technology delivers improved thermal resistance and maximum junction temperature up to 175°C.
R's Gen8 IGBT platform targets industrial applications. With best-in-class Vce(on), robustness and excellent switching characteristics, this IGBT platform has been specifically tailored to achieve the demanding challenges of the industrial market.
The Gen8 1200V IGBT platform is being sampled to major OEM and ODM partners at this time.
