Enhanced U-MOSVII-H Process Drives New Low-Voltage MOSFETs

Enhanced U-MOSVII-H Process Drives New Low-Voltage MOSFETs

Toshiba-Fig-APCIM 2012 Nuremberg, Germany: To save space and reduce losses in secondary synchronous-rectification designs, Toshiba Electronics Europe added 60V and 120V devices to its family of low-voltage, high-speed MOSFETs.

The trench MOSFET devices are based on Toshiba’s eighth-generation, U-MOSVIII-H process. This process improves tradeoff characteristics between low on-resistance (RDS(ON)) and low input capacitance (CISS), boosts switching speeds, and minimises radiated noise.

Available in either TO-220 or TO-220SIS “smart isolation” package formats, the new family members comprise eight 60V MOSFETs and eight 120V MOSFETs. By offering lower RDS(ON) × CISS figures of merit compared to previous generations of devices, the new MOSFETs operate with lower conduction and drive losses, leading to increased efficiency.

Among the new MOSFETs are the TK100E06N1 (TO-220) and TK100A06N1 (TO-220SIS) 60V devices, which feature typical on-resistance ratings (VGS = 10V) down to 1.9mΩ and 2.2mΩ, respectively. The 120V series includes TK56E12N1 (TO-220) and TK56A12N1 (TO-220SIS) devices with respective typical on-resistances of 6.1mΩ and 6.5mΩ (VGS = 10V).


TAGS: Toshiba
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