GaN transistor device cuts energy losses by half

Transphorm Inc. announces JEDEC qualification of the company’s TPH2006PS, GaN (Gallium Nitride) HEMT (High Electron Mobility Transistors) on SiC substrate, making it the industry’s first qualified 600-V HEMT device, according to company sources.

The TPH2006PS, based on its high-performance EZ-GaN technology, combines low switching and conduction losses resulting in reduced energy loss of up to 50% compared to today's conventional silicon-based power conversion designs. The TO-220-packaged device features RDS(on) of 150 mΩ, Qrr of 42 nC, and high frequency switching capability that enables compact, lower cost systems.

The company's efficient and compact products are aimed at simplifying the design and manufacturing of a wide variety of electrical systems and devices, including motor drives, power supplies, and inverters for solar panels and electric vehicles.

For more information, contact Transphorm Inc., 115 Castilian Dr., Goleta, CA 93117. Phone: (805) 456-1300.