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20-V MOSFET Offers Low R<sub>DS(ON)</sub> In Tiny Package

A new 20-V p-channel TrenchFET Gen III MOSFET offers the lowest on-resistance available in the PowerPAK 1212-8 package, according to the company. The Si7615DN has an RDS(ON) of 3.9 mO at 10 V, 5.5 mO at 4.5 V, and 9.8 mO at 2.5 V. The Si7615DN will be used as the adaptor switch and for load switching applications in notebook computers, netbooks, and industrial/general systems. Adaptor switches, which switch between the adaptor/wall power and the battery power, are always on and drawing current. The lower on-resistance of the Si7615DN translates into lower power consumption, saving power and prolonging battery life between charges. The Si7615DN eliminates the need to rely on 30-V power MOSFETs, which until recently were the only p-channel devices available within this very low on-resistance range. Among competing 30-V devices, the lowest available p-channel on-resistance with the area of the PowerPAK 1212-8 (3.3 by 3.3 mm) is 14.4 and 27 mO at gate drives of 10 V and 4.5 V, respectively. The Si7614DN is 100% Rg-tested and halogen-free in accordance with IEC 61249-2-21. Samples and production quantities are available now, with lead times of 10 to 12 weeks for larger orders. Prices start at $0.44 in quantities of 100,000. VISHAY SILICONIX, Malvern, PA. (619) 336-0860.


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