Electronic Design
Industry-First 1Gb DDR4 Perpendicular ST-MRAM Device Introduced

Industry-First 1Gb DDR4 Perpendicular ST-MRAM Device Introduced

During this week’s electronica, Everspin Technologies displayed the industry’s first 1Gb ST-MRAM designed with its perpendicular magnetic tunnel junction (pMTJ), which is being processed by GlobalFoundries. Visitors can see a demonstration of the MRAM 300mm wafer at Booth 545 in Hall A3 through November 11.

Everspin is also adding products to its offering of system solutions with the highest-density ST-MRAM DIMM available in the market, a 1GByte DDR3-compatible module, with quad rank and an industry-standard UDIMM pinout. It is based on Everspin’s 256Mb DDR3 pMTJ ST-MRAM that is now sampling to select customers.

“Everspin continues to lead the marketplace and bring innovative solutions to the storage and server markets. We have previously sampled our 256Mb and have now followed that by displaying the 1Gb ST-MRAM with our proprietary pMTJ,” says Phill LoPresti, president and CEO of Everspin.

TAGS: Components
Hide comments


  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.