Operating from a single 3V supply, the HBT (hetero-junction bipolar transistor) power amplifier products provide linear operation for digital wireless standards. Using advanced module technology, the devices integrate all necessary passive components for full compensation and 50 ohm I/O matching. The chips are manufactured using what's claimed as the first 6-in. analog GaAs fabrication. InGaP (indium gallium phosphide) HBT power amps provide excellent power efficiency and high linearity, enabling handsets to achieve longer battery life and better signal characteristics for voice and data. The chips are available in a fully compensated module or surface-mount plastic package. Call for pricing.