This roundup includes a high-voltage SiC MOSFET in a four-pin package that minimizes switching losses and a new high-density DDR5 DRAM memory based on 12-nm process technology. The first commercial optical beamsteering chip for solid-state LiDAR sensors is also featured, along with an optical digital signal processor (DSP) for 800-Gb/s pluggable modules.
- Ultra-Low-Power Hall-Effect Sensors Fit Small Form Factors
- Up to 1200-V SiC MOSFETs Slash Switching Losses
- 12-nm DDR5 DRAM Memory Doubles Capacity to 32 Gb
- LiDAR-on-a-Chip Launches with Ultra-Wide Field of View
- 800-Gb/s Optical DSP Flings Data Over Long Distances
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