Texas Instrument (TI) has a broad power MOSFET portfolio that offers a wide range discrete and multi-chip module (MCM) solutions enabling low RDSon, low gate charge, high efficiency, fast switching, and small form factor for your design. When it comes to MOSFET datasheets, you have to know what you’re looking for. While certain parameters are obvious and explicit (BVDSS, RDS(ON), gate charge), others can be ambiguous at best (ID, SOA curves), while others can be downright useless at times (see: switching times). In this gallery, TI will attempt to demystify the FET datasheet, so that you can easily locate and discern the most usual data for your application. Click here for the full training series.