Check out our PCIM 2022 coverage
STMicroelectronics’ STPOWER MDmesh M9 and DM9 N-channel superjunction multi-drain silicon power MOSFETs, which target switched-mode power supplies (SMPS), offer a very low on-resistance per unit area, maximizing power density.
The first devices to be launched are the 650-V STP65N045M9 and 600-V STP60N043DM9, each claiming the best maximum RDS(on) in its category at 45 mΩ and 43 mΩ, respectively. With a gate charge (Qg) typically 80 nC at 400-V drain voltage, these devices are presented as having the best RDS(on)max × Qg figure of merit (FoM) currently available.
The gate threshold voltage (VGS(th)), typically 3.7 V for the STP65N045M9 and 4.0 V for STP60N043DM9, minimizes both turn-on and turn-off switching losses, along with a low reverse-recovery charge (QRR) and reverse-recovery time (tRR).
A further feature of ST’s latest high-voltage MDmesh technologies is an additional platinum diffusion process that ensures a fast intrinsic body diode. The peak diode-recovery slope (dv/dt) is greater than for earlier processes. All devices belonging to MDmesh DM9 technology are extremely rugged and can withstand dv/dt up to 120 V/ns at 400 V.
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