Our technology provides our customers with the easiest path to upgrade their legacy power designs or obtain the highest power densities in their new designs with minimal effort. Our technology enables straightforward Si superjunction replacement for PFC, LLC, or PSFB topologies as well as direct compatibility with any SiC MOSFET competitor’s gate-drive requirements.
In addition, we have the highest-performance body diode in a SiC device, lowest Qrr over temperature, nearly 5-V threshold voltage for EMI immunity, and superior short circuit ratings. All this comes with the industry’s widest SiC discrete transistor portfolio.
