Avago’s MGA-43128 high-gain, high-linearity power amplifier targets high-data-rate applications in 700- to 800-MHz cellular infrastructure equipment
Boeblingen, Germany: Avago’s MGA-43128 high-gain, high-linearity power amplifier (PA) targets high-data-rate applications in 700- to 800-MHz cellular infrastructure equipment (see the figure). It provides excellent signal transmission quality with low power consumption for Long-Term Evolution (LTE) access points, customer premises equipment (CPE), and picocell equipment. Also, it can serve as a basestation driver amplifier.
The MGA-43128’s highly linear output power is achieved by using an Avago proprietary 0.25-µm gallium-arsenide (GaAs) enhancement-mode pseudomorphic high electron mobility transistor (pHEMT) process, which allows single 5-V supply operation and usable performance down to 3.3 V.
The device’s low distortion and high power-added efficiency (PAE) help reduce power consumption. RF input is fully matched, while the output includes integrated pre-match circuitry for matching and application simplicity. An integrated bypass switch controlled attenuator provides up to 18.0-dB attenuation. And, the MGA-43128 has a temperature-compensated power detector on chip.
Avago Technologies
www.avagotech.com