The second device built on the company’s power transistor platform technology, the NPT1010 GaN HEMT exhibits a thermal resistance of 1.4°C/W, supposedly the lowest thermal resistance of all GaN products at this power level on the market. The device achieves over 60W, more than 55% drain efficiency, and over 14-dB power gain in 500 MHz to 1 GHz applications with less than 80°C rise in junction temperature. The NPT1010 is available in a ceramic air cavity package in bolt-down and pill (solder) versions. NITRONEX CORP., Durham, NC. (919) 807-9100.