EE Product News

30V Power Transistors Embrace Sixth-Gen FET Tech

Employing the sixth generation of the company’s STripFET VI DeepGATE process, a series of 30V surface-mount power transistors achieves an on resistance as low as 2 milliOhms maximum. This is approximately 20% better than the previous generation and allows the use of small surface-mount power packages in switching regulators and dc/dc converters. The technology also exhibits inherently low gate charge, allowing engineers to use high switching frequencies and thereby specify smaller passive components. The first devices using the process include the STL150N3LLH6 in a 5 mm x 6 mm PowerFLAT package and the STD150N3LLH6 in a DPAK with an on resistance of 2.4 milliOhms. Samples are available for both devices, with production coming in June. Prices start at $0.95 for the STD150N3LLH6 and $1.20 for the STL150N3LLH6, each/2,500. STMICROELECTRONICS, Lexington, MA. (888) 787-3550.


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