Electronic Design

BCD Process Unveils Devices That Lower Die Cost And Size

Two new devices have been qualified on 6-in. wafers for the PBC4 0.5-µm biCMOS-DMOS (BCD) process. The first is a high-power driver. The n-channel medium voltage DMOS large-angle-body (MDL) device features a specific on-resistance (RSP) of 25 Ω mm2, a 1.3-µm gate length, a 2.0-V VT, and a 13.2-V VMAX. The second device is a platinum Schottky diode. For pricing, contact the company.


Hide comments


  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.