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FET Touts On-Resistance Below 1 m<font face="symbol">W</font>

Copper clip packaging and advanced silicon processing are said to have paved the way to the industry's first TO-220 MOSFET with an on-resistance below 1 mW. This reportedly represents a reduction of approximately 40% in the on-state resistance for FETs compared to conventionally packaged devices. MOSFETs are commonly connected to the top of a chip by using a weld where the wire bond would go. With copper clips, instead of connecting to a single point, the entire surface of the chip is connected, improving current distribution and thermal properties. ROYAL PHILIPS ELECTRONICS, San Jose, CA. (800) 234-7381.


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