FETs And Schottky Sit On Same Die

Addressing the need for increasingly smaller packages in dc/dc converter applications, the TPC8A01 enters the industry as the first device to integrate two MOSFETs and a Schottky barrier diode onto a single die. Dubbed a MOSBD, the device is said to greatly reduce wiring resistance and inductance due to the elimination of external wiring between FET and diode. The high-side MOSFET has a maximum VDSS of 30V and a maximum ID of 6A. At VGS = 4.5V, typical on-resistance is 23 milliohms and maximum is 30 milliohms. Hosting the Schottky barrier diode, the low-side MOSFET, or MOSBD, has a maximum VDSS of 30V and a maximum ID of 8.5A. At VGS = 4.5V, typical on-resistance is 16 milliohms and maximum is 21 milliohms. The device is manufactured using the company's UMOS III process technology and comes in a standard SOP-8 package measuring 30 mm² and 1.6 mm thick. Samples are available now at a price of $0.40 each. TOSHIBA AMERICA ELECTRONIC COMPONENTS INC., Irvine, CA. (800) 879-4963.