Electronic Design

GaN HEMT Transistors Enable Efficient S-Band Radar Apps

The company’s latest GaN HEMT power transistors and high power amplifier (HPA) MMIC achieve typical power-added efficiencies of 60%, translating into a reduction in power consumption up to 20% over comparable devices. Matched to 50?, the CGH31240F and CGH35240F S-Band transistors provide a saturated RF output power of 240W over 2.7 to 3.1 GHz and 3.1 to 3.5 GHz bandwidths, respectively. Power gains are greater than 11 dB and pulse droop is less than 0.2 dB. The CMPA2735075F two-stage GaN HEMT MMIC amplifier provides a saturated RF output power of 75W from 2.7 to 3.5 GHz with a power gain of 20 dB. CREE INC., Durham, NC. (919) 313-5300.

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