Debuting as the latest MOSFET built on TrenchFET Gen III p-channel technology, the SiB455EDK features a 1.6 mm x 1.6 mm footprint and specifies on-resistances of 27 mΩ at 4.5V, 39 mΩ at 2.5V, 69 mΩ at 1.8V, and 130 mΩ at 1.5V. These values are reportedly 55 % lower at 4.5V, 52 % lower at 2.5V, and 39 % lower at 1.8V than the company’s previous 12V p-channel device. It is also touted as the only 12V MOSFET with both a gate-source voltage of 10V and an on-resistance rating at 1.5V. Other features include a typical ESD protection of 1.5 kV. Pricing for the SiB455EDK starts at $0.11 each/100,000. VISHAY INTERTECHNOLOGY, INC., Malvern, PA. (619) 336-0860.
