EE Product News

High-Voltage IGBT Built For Rugged Applications

Rated for an avalanche immunity of 1,000V at 60A, the FGL60N100BNTD Insulated Gate Bipolar Transistor (IGBT) is protected from field failures caused by avalanche breakdown during off-state switching. This immunity makes the device extremely rugged in induction heating applications and microwave ovens. The device is fabricated in a proprietary trench process together with non punch-through technology(NPT) to achieve its high avalanche immunity. Forward switching speed (tf) is rated 130 ns typical, while the low saturation voltage (VCE(SAT) = 2.5V at IC = 60A) limits conduction losses at high current loads. A built-in fast recovery diode simplifies circuit design and reduces component count. The IGBT is packaged in a TO-264, which is lead-free to meet the requirements of the joint IPC/JEDEC standard J-STD-020B. It is compliant with European Union requirements to take effect in 2005. Price is $4.08 each/1,000. FAIRCHILD SEMICONDUCTOR, San Jose, CA. (408) 822-2279.


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