Achieving what may be the industry's lowest noise figures with high associated gain, the NE3509M04 and NE3508M04 GaAs HJ-FETs are suitable for use as low-noise and driver amplifiers for satellite-radio/GPS antennas and other L-Band applications. Groomed as a first stage amplifier, the NE3509M04 features a 0.35 dB noise figure with 16.3 dB of gain at 2.4 GHz, 2V, and 10 mA. The NE3508M04, with a 0.41 dB noise figure and 14 dB gain, sets up as a second- or third-stage companion. Both devices are available in 4-pin, flat-lead M04 packages measuring 1.25 mm x 2 mm and 0.59 mm in height. CALIFORNIA EASTERN LABORATORIES, Santa Clara, CA. (408) 988-3500.
Company: CALIFORNIA EASTERN LABORATORIES
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