Electronic Design

MESFET Boasts 13-dB Gain At 2 GHz

The CRF-24010, a Class A/B 10-W silicon-carbide (SiC) MESFET, promises a minimum gain of 13 dB at 2 GHz, which is greater than 3 dB higher than previous SiC MESFETs. The device has a third-order intermodulation of −31 dBc at a peak envelope power of 10 W, operates from dc to 2.7 GHz, and has multi-octave instantaneous bandwidth. Power-added efficiency under rated conditions is greater than 44% at P1dB. The CRF-24010 is the first product fabricated in the company's second-generation 48-V SiC MESFET process. For pricing, contact the vendor.

Cree Microwave Inc.

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