The latest addition to California Eastern Laboratories' (CEL's) burgeoning family of NEC silicon-germanium (SiGe) low-noise transistors is NESG2101M05. Featuring a low noise figure, good linearity, and high gain performance, this device has been designed to operate at voltages up to 5 V. With voltage-regulator requirements simplified, it also is a viable option as a first-stage device for 802.11a WLAN, CDMA, and OFDM transceiver applications.
Among the specific features of this new member is a high P1dB of 21 dBm at around 2 GHz, 3.6 V, and 10 mA. Its noise figure is 0.9 dB at about 2 GHz, 2 V, and 10 mA. Additionally, the device boasts a high absolute maximum VCEO rating of 5 V.
The NESG2101M05 low-noise transistor is fabricated using NEC's SiGe UHS2-HV (high-voltage) wafer process. It is housed in a miniature, low-profile, flat-lead M05 package. Based on the SOT-343 footprint, the NESG2101M05 measures 0.59 mm high with dimensions of 2.0 × 1.25 mm. Samples of the NESG2101M05 are now available. Mass production is scheduled to start now. In unit quantities of 100,000, the transistor is priced at 39¢ apiece.
California Eastern Labs
4590 Patrick Henry Dr., Santa Clara, CA 95054; (408) 988-3500, www.cel.com.