EE Product News

Power MOSFET Boasts Very Low Conduction Losses

The second generation of the MDmesh (Multiple Drain mesh) technology has debuted with the STD11NM60N power MOSFET, which features an RDS(ON) of 450 mΩ, up to 55% lower than previous MDmesh devices, without sacrificing control of temperature dependence. The device also has an energy-optimized driver circuit that enables the MOSFET to drive higher currents at a lower gate threshold voltage, VGS(th). By keeping the same threshold spread (2V), the range of VGS used to drive the device has been lowered, which not only optimizes the drive but also ensures a high noise immunity. This prevents the circuit from switching on unintentionally. The device’s excellent diode dv/dt capability and good avalanche performance allow users to keep operating temperatures within the typical working range. As a result of the very low conduction losses and reduced power dissipation, the device also helps users cut heatsink dimensions and save board space. The chips come in DPAK/IPAK or TO-220FP packages. The STD11NM60N is available now, priced at $0.90 each/10,000. STMICROELECTRONICS, Lexington, MA. (781) 861-2650.


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