Power MOSFETs Offer Low On-Resistance

Aug. 1, 1998
With an on-resistance of only 7 milliohms for the n-channel SUD50N03-07 and 10 milliohms for the p-channel SUD45P03-10, these TrenchFETs are said to handle about one-third more current than previous generation MOSFETs while affording designers the

With an on-resistance of only 7 milliohms for the n-channel SUD50N03-07 and 10 milliohms for the p-channel SUD45P03-10, these TrenchFETs are said to handle about one-third more current than previous generation MOSFETs while affording designers the same thermal design rules. For example, the devices let designers use next-generation µPs requiring higher current without making any other changes to circuits. The TrenchFETs give designers more muscle when compared with SO-8 devices that handle a maximum of 10A to 12.5A. With a small increase in footprint, maximum usable current for these DPAK devices is 20A for n-channel and 15A for the p-channel devices.

Sponsored Recommendations

Highly Integrated 20A Digital Power Module for High Current Applications

March 20, 2024
Renesas latest power module delivers the highest efficiency (up to 94% peak) and fast time-to-market solution in an extremely small footprint. The RRM12120 is ideal for space...

Empowering Innovation: Your Power Partner for Tomorrow's Challenges

March 20, 2024
Discover how innovation, quality, and reliability are embedded into every aspect of Renesas' power products.

Article: Meeting the challenges of power conversion in e-bikes

March 18, 2024
Managing electrical noise in a compact and lightweight vehicle is a perpetual obstacle

Power modules provide high-efficiency conversion between 400V and 800V systems for electric vehicles

March 18, 2024
Porsche, Hyundai and GMC all are converting 400 – 800V today in very different ways. Learn more about how power modules stack up to these discrete designs.

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!