EE Product News

Power MOSFETs Sport Low Switching Losses

The Gen III TrenchFET family of power MOSFETs now includes two 20-V and two 30-V N-channel devices that are the first to offer TurboFET technology, which uses a charge-balanced drain structure to lower the gate charge by up to 45%. The result is significantly lower switching losses and faster switching, it’s claimed. The 20-V SiS426DN device offers the industry's lowest on-resistance-times-gate charge for a device with this voltage rating in the 3-mm by 3-mm PowerPAK 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6 mOhms-nC at 4.5 V and 117.60 mOhms-nC at 10 V for the SiS426DN, which features a low typical gate charge of 13.2 nC at a 4.5-V gate drive and 28 nC at a 10-V gate drive. Vishay's 30-V TurboFETs include the Si7718DN in the PowerPAK 1212-8, and the Si7784DP in the PowerPAK SO-8. Both MOSFETs offer typical gate charge of 13.7 nC at 4.5 V and 30 nC at 10 V, and on-resistance-times-gate charge FOMs of 112.34 mOhms-nC at 4.5 V and 180 mOhms-nC at 10 V. The devices will be used as the high-side MOSFET in synchronous buck converters. The Gen III power MOSFETs with TurboFET are available now with lead times of 10 to 12 weeks for large orders. Pricing starts at $0.32 in 100,000-piece quantities. VISHAY INTERTECHNOLOGY INC., Malvern, PA. (619) 336-0860.


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