Employing silicon carbide (SiC), the RJS6005TDPP Schottky barrier diode is suitable for use in high-output electronic systems such as air conditioners, etc. The device enlists technology from Hitachi, Ltd. and Renesas that enables 40% lower power consumption over Renesas’ existing power devices using silicon. Features of the RJS6005TDPP include a reverse recovery time of 15 ns, forward voltage of 1.5V, and a package equivalent to a standard TO-220, with which it is also pin compatible. Samples of the RJS6005TDPP SiC SBD are available for $5 each. RENESAS TECHNOLOGY AMERICA INC., San Jose, CA. (408) 382-7407.