EE Product News

SiGe Transistor Takes Center Stage In LNAs

Said to be desirable for use as a first stage LNA or oscillator in 1.6-, 1.9-, 2.4-, 3.5- or 5.8-GHz designs, the NESG2030M04 silicon-germanium (SiGe) transistor employs the company's 60 GHz fT SiGe UHS2 wafer process. This proprietary process is said to make the transistor usable in applications up to 10 GHz. Other features of the SiGe transistor include a noise figure of 0.9 dB, gain of 16 dB, and a linearity of 22 dBm. Housed in a SOT-343, the 2 x 2.05 mm device stands just 0.59 mm high. For further information and price, call CALIFORNIA EASTERN LABORATORIES, Santa Clara, CA. (408) 988-3500.


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